? 2006 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 22 m ? v gs = 15 v, i d = 140a 17 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c90a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 280 a i ar t c = 25 c60a e ar t c = 25 c 100 mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 300 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, 1 minute 2500 v~ m d terminal torque 1.13/10 nm/lb.in. mounting torque 1.13/10 nm/lb.in. weight 5g ds99298e(12/05) polarht tm hiperfet power mosfet isoplus247 tm ixfr 140n20p n-channel enhancement mode fast intrinsic diode avalanche rated features l international standard isolated package l ul recognized package l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect l fast intrinsic diode advantages l easy to mount l space savings l high power density v dss = 200 v i d25 = 90 a r ds(on) 22 m ? ? ? ? ? t rr 200 ns g = gate d = drain s = source (isolated tab) g d s isoplus247 (ixfr) e153432 (electrically isolated back surface)
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 140n20p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 50 84 s c iss 7500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1800 pf c rss 280 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 35 ns t d(off) r g = 3.3 ? (external) 150 ns t f 90 ns q g(on) 240 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 50 nc q gd 100 nc r thjc 0.5 c/w r thcs isoplus247 0.15 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 90 a i sm repetitive 280 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 0.6 c i rm 6 isoplus 247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2006 ixys all rights reserved ixfr 140n20p fig. 2. exte nde d output characte ris tics @ 25 o c 0 30 60 90 120 150 180 210 240 270 300 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 20 40 60 80 100 120 140 0123456 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 20 40 60 80 100 120 140 00.5 11.5 22.5 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alize d to i d = 70a value vs. junction tem perature 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 140a i d = 70a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 70a value vs. drain current 0.5 1 1.5 2 2.5 3 3.5 4 0 50 100 150 200 250 300 i d - amperes r d s ( o n ) - normalized t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v fig. 6. drain current vs. case tem perature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current lim it
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 140n20p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 250 q g - nanocoulombs v g s - volts v ds = 100v i d = 70a i g = 10m a fig. 7. input adm ittance 0 25 50 75 100 125 150 175 200 225 44.5 55.5 66.5 77.5 8 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 40 80 120 160 200 240 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source curre nt vs . source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1m s dc t j = 175 o c t c = 25 o c r ds(on) lim it 10m s 25s
? 2006 ixys all rights reserved ixfr 140n20p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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